Datasheet > RN1711JE(TPL3,F)

RN1711JE(TPL3,F)

更新时间： 2024-11-07 08:46:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	256K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1711JE(TPL3,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	120	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON

RN1711JE(TPL3,F) 数据手册

RN1710JE,RN1711JE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1710JE,RN1711JE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (5 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

•

Wide range of resistor values are available to use in various circuit

designs.

Complementary to RN2710JE~RN2711JE

1.BASE1

2.EMITTER

3.BASE2

4.COLLECTOR2

5.COLLECTOR1

(B1)

(E)

(B2)

(C2)

(C1)

Equivalent Circuit and Bias Resistor Values

JEDEC

JEITA

―

TOSHIBA

―

Weight: 0.003 g (typ.)

Equivalent Circuit

(top view)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

100

150

stg

−55~150

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

12 3 4 5 6

中文翻译

下载PDF

与RN1711JE(TPL3,F)相关器件

型号	品牌	获取价格	描述	数据表
RN1711TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN-171-DS	MICROCHIP	获取价格	RN-171 802.11 b/g Wireless LAN Module
RN171-I/RM	MICROCHIP	获取价格	DATACOM, LAN SWITCHING CIRCUIT
RN171-I/RM475	MICROCHIP	获取价格	RF TXRX MODULE WIFI
RN171-I/RM481	MICROCHIP	获取价格	LAN Switching Circuit
RN-171-PICTAIL	MICROCHIP	获取价格	16-bit Embedded Control Solutions
RN-171XVS-I/RM	ETC	获取价格	This document describes the hardware and software setup for Roving Networks RN-XV-RD2 eval
RN171XVS-I/RM	MICROCHIP	获取价格	RF TXRX MODULE WIFI RP-SMA ANT
RN-171XVU-I/RM	ETC	获取价格	This document describes the hardware and software setup for Roving Networks RN-XV-RD2 eval
RN171XVU-I/RM	MICROCHIP	获取价格	RF TXRX MODULE WIFI U.FL ANT

与RN1711JE(TPL3,F)相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1711JE(TPL3,F)

RN1711JE(TPL3,F) 技术参数

RN1711JE(TPL3,F) 数据手册

与RN1711JE(TPL3,F)相关器件

与RN1711JE(TPL3,F)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1711JE(TPL3,F)

RN1711JE(TPL3,F) 技术参数

RN1711JE(TPL3,F) 数据手册

与RN1711JE(TPL3,F)相关器件

与RN1711JE(TPL3,F)相关文章

您还可以找

您在本页遇到什么问题？