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RN1901-11 PDF预览

RN1901-11

更新时间: 2024-11-07 07:51:51
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管晶体管
页数 文件大小 规格书
1页 35K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 6 PIN, BIP General Purpose Small Signal

RN1901-11 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.91其他特性:BUILT-IN BIAS RESISTORS
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e0元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON

RN1901-11 数据手册

  

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