Datasheet > RN1901TE85L

RN1901TE85L

更新时间： 2024-11-06 20:50:07

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
7页	460K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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技术参数
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RN1901TE85L 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：	unknown	风险等级：	5.7
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	6 pF	集电极-发射极最大电压：	50 V
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	30
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	250 MHz	VCEsat-Max：	0.3 V
Base Number Matches：	1

RN1901TE85L 数据手册

RN1901~RN1906

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1901,RN1902,RN1903

RN1904,RN1905,RN1906

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z Including two devices in US6 (ultra super mini type with 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2901 to RN2906

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1901

RN1902

RN1903

RN1904

RN1905

RN1906

4.7

US6

JEDEC

―

JEITA

2.2

4.7

TOSHIBA

Weight: 6.8mg(typ.)

2-2J1A

Equivalent Circuit (Top View)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1901 to 1906

Collector-emitter voltage

RN1901 to 1904

RN1905, 1906

Emitter-base voltage

EBO

Collector current

100

200

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

RN1901 to 1906

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

2010-05-14

12 3 4 5 6 7

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与RN1901TE85L相关器件

型号	品牌	获取价格	描述	数据表
RN1901TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1901TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1902	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1902(TE85L,F)	TOSHIBA	获取价格	Trans Digital BJT NPN 50V 100mA 6-Pin US T/R
RN1902(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN,
RN1902AFS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1902FE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1902FE(TE85L)	TOSHIBA	获取价格	RN1902FE(TE85L)
RN1902FE,LF(CT	TOSHIBA	获取价格	暂无描述
RN1902FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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