Datasheet > RN1903FS(TPL3)

RN1903FS(TPL3)

更新时间： 2024-11-10 07:01:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	133K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP

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中文翻译

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数据手册

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RN1903FS(TPL3) 数据手册

RN1901FS~RN1906FS

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)

RN1901FS,RN1902FS,RN1903FS

RN1904FS,RN1905FS,RN1906FS

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

1.0±0.05

0.8±0.05

0.1±0.05

•

Two devices are incorporated into a fine pitch small mold (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

•

Complementary to RN2901FS~RN2906FS

Equivalent Circuit and Bias Resistor Values

1.EMIITTER1

2.BASE1

(E1)

(B1)

Type No.

R1 (kΩ)

R2 (kΩ)

3.COLLECTOR2 (C2)

4. EMIITTER2

5.BASE2

6.COLLECTOR1 (C1)

(E2)

(B2)

RN1901FS

RN1902FS

RN1903FS

RN1904FS

RN1905FS

RN1906FS

4.7

fS6

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-1F1D

Weight: 0.001g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1901FS~

1906FS

Collector-emitter voltage

RN1901FS~

1904FS

Emitter-base voltage

EBO

RN1905FS,

1906FS

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

RN1901FS~

RN1906FS

150

−55~150

°C

stg

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

12 3 4 5 6 7 8

中文翻译

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与RN1903FS(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1903TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1903TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1904	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1904AFS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1904FE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1904FE(T5LMAA,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
RN1904FE(TE85L)	TOSHIBA	获取价格	RN1904FE(TE85L)
RN1904FE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1904FE(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1904FE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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