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RN1901AFS PDF预览

RN1901AFS

更新时间： 2024-11-06 11:58:59
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
8页 179K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN1901AFS 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.45其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.08 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：30
JESD-30 代码：R-PDSO-F6元件数量：1
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

RN1901AFS 数据手册

 浏览型号RN1901AFS的Datasheet PDF文件第2页浏览型号RN1901AFS的Datasheet PDF文件第3页浏览型号RN1901AFS的Datasheet PDF文件第4页浏览型号RN1901AFS的Datasheet PDF文件第5页浏览型号RN1901AFS的Datasheet PDF文件第6页浏览型号RN1901AFS的Datasheet PDF文件第7页 
RN1901AFS~RN1906AFS  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)  
RN1901AFS, RN1902AFS, RN1903AFS  
RN1904AFS, RN1905AFS, RN1906AFS  
Switching, Inverter Circuit, Interface Circuit and Driver  
Circuit Applications  
Unit: mm  
1.0±0.05  
0.8±0.05  
0.1±0.05  
0.1±0.05  
•
•
Two devices are incorporated into a fine-pitch, Small-Mold (6-pin)  
package.  
1
6
5
Incorporating a bias resistor into a transistor reduces the parts count.  
2
Reducing the parts count enables the manufacture of ever more  
compact equipment and saves assembly costs.  
4
3
•
Complementary to the RN2901AFS~RN2906AFS  
Equivalent Circuit and Bias Resistor Values  
C
(E1)  
1. EMITTER1  
2. BASE1  
3. COLLECTOR2  
4. EMITTER2  
5. BASE2  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
(B1)  
(C2)  
(E2)  
(B2)  
(C1)  
RN1901AFS  
RN1902AFS  
RN1903AFS  
RN1904AFS  
RN1905AFS  
RN1906AFS  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
6. COLLECTOR1  
fS6  
22  
JEDEC  
JEITA  
―
―
47  
E
2.2  
4.7  
TOSHIBA  
2-1F1D  
Weight: 0.001 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Equivalent Circuit  
(top view)  
6
5
2
4
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
V
50  
50  
CBO  
CEO  
RN1901AFS~1906AFS  
Collector-emitter voltage  
V
Q2  
3
Q1  
RN1901AFS~1904AFS  
RN1905AFS, 1906AFS  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
80  
mA  
mW  
°C  
1
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
50  
C
RN1901AFS~1906AFS  
T
150  
−55~150  
j
T
stg  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
1
2007-11-01  
12345678

中文翻译

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