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RN1901FE PDF预览

RN1901FE

更新时间： 2024-09-16 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
8页 550K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN1901FE 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.45
Is Samacsys：N其他特性：BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：30
JESD-30 代码：R-PDSO-F6元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：0.1 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：250 MHzBase Number Matches：1

RN1901FE 数据手册

 浏览型号RN1901FE的Datasheet PDF文件第2页浏览型号RN1901FE的Datasheet PDF文件第3页浏览型号RN1901FE的Datasheet PDF文件第4页浏览型号RN1901FE的Datasheet PDF文件第5页浏览型号RN1901FE的Datasheet PDF文件第6页浏览型号RN1901FE的Datasheet PDF文件第7页 
RN1901FE~RN1906FE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)  
RN1901FE, RN1902FE, RN1903FE  
RN1904FE, RN1905FE, RN1906FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
•
•
Two devices are incorporated into an Extreme-Super-Mini (6-pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more compact  
equipment and lowers assembly cost.  
•
Complementary to RN2901FE to RN2906FE  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1901FE  
RN1902FE  
RN1903FE  
RN1904FE  
RN1905FE  
RN1906FE  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
22  
JEDEC  
―
―
47  
E
JEITA  
2.2  
4.7  
TOSHIBA  
2-2N1G  
Weight: 3 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
6
5
4
V
V
50  
50  
V
V
CBO  
CEO  
RN1901FE to  
RN1906FE  
Collector-emitter voltage  
Q2  
3
RN1901FE to  
RN1904FE  
Q1  
10  
Emitter-base voltage  
V
V
EBO  
RN1905FE,  
RN1906FE  
5
1
2
Collector current  
I
100  
100  
mA  
C
P
(Note  
C
Collector power dissipation  
mW  
RN1901FE to  
RN1906FE  
1)  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
−55 to 150  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
1
2010-05-14  
12345678

中文翻译

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