Datasheet > RN1710TE85R

RN1710TE85R

更新时间： 2024-11-06 19:38:39

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	279K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1710TE85R 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code：	unknown	风险等级：	5.76
最大集电极电流 (IC)：	0.1 A	基于收集器的最大容量：	6 pF
集电极-发射极最大电压：	50 V	配置：	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	120	JESD-30 代码：	R-PDSO-G5
元件数量：	2	端子数量：	5
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	250 MHz
VCEsat-Max：	0.3 V	Base Number Matches：	1

RN1710TE85R 数据手册

RN1710,RN1711

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1710,RN1711

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z Including two devices in USV (ultra super mini type with 5 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2710 and RN2711

Equivalent Circuit

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

USV

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

JEDEC

―

CBO

CEO

EBO

JEITA

Collector-emitter voltage

Emitter-base voltage

TOSHIBA

2−2L1A

Weight: 6.2 mg (typ.)

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

200

150

Equivalent Circuit

(Top View)

stg

−55 to150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.)

are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

2010-05-21

12 3 4 5 6

中文翻译

下载PDF

与RN1710TE85R相关器件

型号	品牌	获取价格	描述	数据表
RN1711	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1711(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,
RN1711(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,
RN1711,LF	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1711JE	TOSHIBA	获取价格	Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1711JE(TE85L)	TOSHIBA	获取价格	RN1711JE(TE85L)
RN1711JE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN1711TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN-171-DS	MICROCHIP	获取价格	RN-171 802.11 b/g Wireless LAN Module
RN171-I/RM	MICROCHIP	获取价格	DATACOM, LAN SWITCHING CIRCUIT

与RN1710TE85R相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1710TE85R

RN1710TE85R 技术参数

RN1710TE85R 数据手册

与RN1710TE85R相关器件

与RN1710TE85R相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1710TE85R

RN1710TE85R 技术参数

RN1710TE85R 数据手册

与RN1710TE85R相关器件

与RN1710TE85R相关文章

您还可以找

您在本页遇到什么问题？