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RN1710JE PDF预览

RN1710JE

更新时间: 2024-11-04 21:53:39
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管开关光电二极管PC
页数 文件大小 规格书
6页 160K
描述
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1710JE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5针数:5
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.5
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-F5元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

RN1710JE 数据手册

 浏览型号RN1710JE的Datasheet PDF文件第2页浏览型号RN1710JE的Datasheet PDF文件第3页浏览型号RN1710JE的Datasheet PDF文件第4页浏览型号RN1710JE的Datasheet PDF文件第5页浏览型号RN1710JE的Datasheet PDF文件第6页 
RN1710JE,RN1711JE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1710JE,RN1711JE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
Two devices are incorporated into an Extreme-Super-Mini (5 pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
Wide range of resistor values are available to use in various circuit  
designs.  
Complementary to RN2710JE~RN2711JE  
1.BASE1  
2.EMITTER  
3.BASE2  
4.COLLECTOR2  
5.COLLECTOR1  
(B1)  
(E)  
(B2)  
(C2)  
(C1)  
Equivalent Circuit and Bias Resistor Values  
C
R1  
JEDEC  
JEITA  
B
TOSHIBA  
E
Weight: 0.003 g (typ.)  
Equivalent Circuit  
(top view)  
Maximum Ratings  
(Ta = 25°C) (Q1, Q2 common)  
5
4
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
50  
50  
V
V
Q1  
Q2  
CBO  
CEO  
EBO  
5
V
I
100  
mA  
mW  
°C  
°C  
C
1
2
3
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note)  
100  
C
T
150  
j
T
55~150  
stg  
Note: Total rating  
1
2004-03-01  

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