是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F5 | 针数: | 5 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.5 |
Is Samacsys: | N | 其他特性: | BUILT IN BIAS RESISTOR |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 120 |
JESD-30 代码: | R-PDSO-F5 | 元件数量: | 2 |
端子数量: | 5 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.1 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN1710JE(TE85L) | TOSHIBA |
获取价格 |
RN1710JE(TE85L) | |
RN1710JE(TPL3) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR | |
RN1710TE85L | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose | |
RN1710TE85R | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose | |
RN1711 | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | |
RN1711(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, | |
RN1711(TE85R) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, | |
RN1711,LF | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor | |
RN1711JE | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) | |
RN1711JE(TE85L) | TOSHIBA |
获取价格 |
RN1711JE(TE85L) |