Datasheet > RN1710(TE85L,F)

RN1710(TE85L,F)

更新时间： 2024-11-05 20:37:07

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	284K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353

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中文翻译

获取价格

技术参数
数据手册

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RN1710(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	120	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1710(TE85L,F) 数据手册

RN1710,RN1711

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1710,RN1711

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z Including two devices in USV (ultra super mini type with 5 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2710 and RN2711

Equivalent Circuit

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

USV

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

JEDEC

―

CBO

CEO

EBO

JEITA

Collector-emitter voltage

Emitter-base voltage

TOSHIBA

2−2L1A

Weight: 6.2 mg (typ.)

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

200

150

Equivalent Circuit

(Top View)

stg

−55 to150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.)

are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

2010-05-21

12 3 4 5 6

中文翻译

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与RN1710(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN1710(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,
RN1710,LF	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1710JE	TOSHIBA	获取价格	Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1710JE(TE85L)	TOSHIBA	获取价格	RN1710JE(TE85L)
RN1710JE(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN1710TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1710TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1711	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1711(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,
RN1711(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,

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