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RN1710,LF PDF预览

RN1710,LF

更新时间: 2024-11-01 13:12:59
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
5页 165K
描述
Small Signal Bipolar Transistor

RN1710,LF 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknownFactory Lead Time:12 weeks
风险等级:5.74Base Number Matches:1

RN1710,LF 数据手册

 浏览型号RN1710,LF的Datasheet PDF文件第2页浏览型号RN1710,LF的Datasheet PDF文件第3页浏览型号RN1710,LF的Datasheet PDF文件第4页浏览型号RN1710,LF的Datasheet PDF文件第5页 
                                                               
                                                               
                                                                           
                                                                            
RN1710,RN1711  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1710,RN1711  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
l Including two devices in USV (ultra super mini type with 5 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2710~RN2711  
Equivalent Circuit  
Maximum Ratings (Ta = 25°C)  
JEDEC  
Characterisstic  
Collector-base voltage  
Symbol  
Rating  
Unit  
EIAJ  
TOSHIBA  
Weight: 6.2mg  
22L1A  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Equivalent Circuit  
(Top View)  
5
V
I
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
*: Total rating  
P *  
C
200  
T
150  
j
T
55~150  
stg  
Electrical Characteristics (Ta = 25°C)  
Test  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Circuit  
Collector cut-off current  
Emitter cut-off current  
I
I
V
V
V
= 50V, I = 0  
100  
100  
700  
0.3  
nA  
nA  
CBO  
CB  
EB  
CE  
E
= 5V, I = 0  
C
EBO  
DC current gain  
h
= 5V, I = 1mA  
120  
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Translation frequency  
V
I
= 5mA, I = 0.25mA  
0.1  
250  
3
V
C
B
f
V
V
= 10V, I = 5mA  
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= 10V, I = 0, f = 1MHz  
E
6
ob  
RN1710  
Input resistor  
3.29  
7
4.7  
10  
6.11  
13  
R1  
kΩ  
RN1711  
1
2001-06-07  

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