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RN1708JE PDF预览

RN1708JE

更新时间: 2024-11-04 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体驱动器开关小信号双极晶体管光电二极管
页数 文件大小 规格书
5页 108K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

RN1708JE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5针数:5
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.52
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR RATIO IS 2.14
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-F5元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

RN1708JE 数据手册

 浏览型号RN1708JE的Datasheet PDF文件第2页浏览型号RN1708JE的Datasheet PDF文件第3页浏览型号RN1708JE的Datasheet PDF文件第4页浏览型号RN1708JE的Datasheet PDF文件第5页 
                                                        
                                                        
RN1707JE~RN1709JE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1707JE,RN1708JE,RN1709JE  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications.  
Unit: mm  
·
·
Two devices are incorporated into an Extreme-Super-Mini (5 pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
Wide range of resistor values are available to use in various circuit  
designs.  
·
·
Complementary to RN2707JE~2709JE  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kW)  
R2 (kW)  
RN1707JE  
RN1708JE  
RN1709JE  
10  
22  
47  
47  
47  
22  
R1  
B
JEDEC  
JEITA  
E
TOSHIBA  
Weight:  
g (typ.)  
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
5
4
V
V
50  
50  
V
V
CBO  
CEO  
RN1707JE~  
1709JE  
Collector-emitter voltage  
Q1  
Q2  
RN1707JE  
RN1708JE  
RN1709JE  
6
Emitter-base voltage  
V
V
7
EBO  
15  
1
2
3
Collector current  
I
100  
100  
150  
-55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note)  
C
T
RN1707JE~  
1709JE  
j
T
°C  
stg  
Note: Total rating  
1
2002-01-29  

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