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RN1708,LF PDF预览

RN1708,LF

更新时间: 2024-11-06 10:50:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 296K
描述
Small Signal Bipolar Transistor

RN1708,LF 数据手册

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RN1707~RN1709  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN1707, RN1708, RN1709  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z Including two devices in USV (ultra super mini type with 5 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2707 to RN2709  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN1707  
RN1708  
RN1709  
10  
22  
47  
47  
47  
22  
USV  
JEDEC  
JEITA  
TOSHIBA  
Weight: 6.2mg (typ.)  
2-2L1A  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Equivalent Circuit  
(Top View)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
V
V
CBO  
CEO  
RN1707 to 1709  
Collector-emitter voltage  
50  
RN1707  
RN1708  
RN1709  
6
7
Emitter-base voltage  
V
V
EBO  
15  
Collector current  
I
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
200  
RN1707 to 1709  
T
150  
j
T
stg  
55 to150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: Total rating  
Start of commercial production  
1992-01  
1
2014-03-01  

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