Datasheet > RN1322A(TE85L,F)

RN1322A(TE85L,F)

更新时间： 2024-11-12 19:55:23

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RN1322A(TE85L,F) 数据手册

RN1321A∼RN1327A

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1321A,RN1322A,RN1323A,RN1324A

RN1325A,RN1326A,RN1327A

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z High current driving is possible.

z Since bias resisters are built in the transistor,the miniaturization of the

apparatus by curtailment of the number of parts and laborsaving of an

assembly are possible.

z Many kinds of resistance value are lined up in order to support various

kinds of circuit design.

z Complementary to RN2321A to RN2327A

z Low V

enable to be low power dissipation on high current driving.

CE(sat)

Equivalent Circuit And Bias Resistance Values

Type No.

R1 (kΩ)

R2 (kΩ)

1. BASE

2. EMITTER

3. COLLECTOR

RN1321A

RN1322A

RN1323A

RN1324A

RN1325A

RN1326A

RN1327A

2.2

4.7

2.2

4.7

JEDEC

⎯

JEITA

SC-70

2-2E1A

0.47

TOSHIBA

Weight: 6 mg (typ.)

2.2

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1321A to 1327A

Collector-emitter voltage

Emitter-base voltage

RN1321A to 1324A

RN1325A, 1326A

RN1327A

EBO

Collector current

500

°C

Collector power dissipation

Junction temperature

Storage temperature range

100

RN1321A to 1327A

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-04-06

12 3 4 5 6 7...11

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