Datasheet > RN1325A

RN1325A

更新时间： 2024-01-29 06:48:53

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
11页	211K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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技术参数
数据手册

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RN1325A 技术参数

生命周期：	Obsolete	零件包装代码：	SC-70
包装说明：	2-2E1A, USM, SC-70, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.84
其他特性：	BUILT-IN BIAS RESISTOR RATIO 0.047	最大集电极电流 (IC)：	0.5 A
集电极-发射极最大电压：	12 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	140	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	300 MHz
Base Number Matches：	1

RN1325A 数据手册

RN1321A∼RN1327A

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1321A,RN1322A,RN1323A,RN1324A

RN1325A,RN1326A,RN1327A

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit: mm

z High current driving is possible.

z Since bias resisters are built in the transistor,the miniaturization of the

apparatus by curtailment of the number of parts and laborsaving of an

assembly are possible.

z Many kinds of resistance value are lined up in order to support various

kinds of circuit design.

z Complementary to RN2321A~RN2327A

z Low V

enable to be low power dissipation on high current driving.

CE(sat)

Equivalent Circuit And Bias Resistance Values

1. BASE

2. EMITTER

3. COLLECTOR

Type No.

R1 (kΩ)

R2 (kΩ)

RN1321A

RN1322A

RN1323A

RN1324A

RN1325A

RN1326A

RN1327A

2.2

4.7

JEDEC

JEITA

⎯

2.2

4.7

SC-70

2-2E1A

TOSHIBA

0.47

Weight: 0.006 g (typ.)

2.2

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1321A~1327A

Collector-emitter voltage

Emitter-base voltage

RN1321A~1324A

RN1325A, 1326A

RN1327A

EBO

Collector current

500

100

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1321A~1327A

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7...11

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与RN1325A相关器件

型号	品牌	获取价格	描述	数据表
RN1325A(TE85L)	TOSHIBA	获取价格	RN1325A(TE85L)
RN1326A	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1326A(TE85L)	TOSHIBA	获取价格	RN1326A(TE85L)
RN1327A	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN-134	ETC	获取价格	RN-131G & RN-131C 802.11 b/g Wireless LAN Module
RN1401	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1401(F)	TOSHIBA	获取价格	暂无描述
RN1401(T5L,PP,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1401(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purp
RN1401(TE85L,F)	TOSHIBA	获取价格	Trans Digital BJT NPN 50V 100mA 3-Pin S-Mini T/R

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