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RN1402(TE85L,F) PDF预览

RN1402(TE85L,F)

更新时间： 2024-11-12 20:10:31
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 576K
描述
Trans Digital BJT NPN 50V 100mA 3-Pin S-Mini T/R

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中文翻译

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RN1402(TE85L,F) 技术参数

是否Rohs认证：符合生命周期：Active
Reach Compliance Code：unknown风险等级：1.74
Is Samacsys：NBase Number Matches：1

RN1402(TE85L,F) 数据手册

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RN1401～RN1406  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1401, RN1402, RN1403  
RN1404, RN1405, RN1406  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
z With built-in bias resistors  
z Simplified circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2401~RN2406  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (kΩ  
R2 (kΩ  
RN1401  
RN1402  
RN1403  
RN1404  
RN1405  
RN1406  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
JEDEC  
TO-236MOD  
2.2  
4.7  
JEITA  
SC-59  
TOSHIBA  
2-3F1A  
Weight: 0.012g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1401~1406  
Collector-emitter voltage  
RN1401~1404  
RN1405, 1406  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
200  
150  
−55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN1401~1406  
T
j
T
stg  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-11-01  
12345678

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