Datasheet > RN1405(T5LFT)

RN1405(T5LFT)

更新时间： 2024-11-12 21:04:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	581K
描述
Small Signal Bipolar Transistor

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技术参数
数据手册

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RN1405(T5LFT) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

RN1405(T5LFT) 数据手册

RN1401～RN1406

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1401, RN1402, RN1403

RN1404, RN1405, RN1406

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z With built-in bias resistors

z Simplified circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2401 to RN2406

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ

R2 (kΩ

RN1401

RN1402

RN1403

RN1404

RN1405

RN1406

4.7

JEDEC

TO-236MOD

2.2

4.7

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1401 to 1406

Collector-emitter voltage

RN1401 to 1404

RN1405, 1406

Emitter-base voltage

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

200

RN1401 to 1406

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1983-06

2014-03-01

12 3 4 5 6 7 8

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