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RN1409(TE85L,F) PDF预览

RN1409(TE85L,F)

更新时间: 2024-11-12 19:58:11
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 359K
描述
Small Signal Bipolar Transistor

RN1409(TE85L,F) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.78
Base Number Matches:1

RN1409(TE85L,F) 数据手册

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RN1407RN1409  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1407, RN1408, RN1409  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit: mm  
z With built-in bias resistors  
z Simplified circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2407 to RN2409  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN1407  
RN1408  
RN1409  
10  
22  
47  
47  
47  
22  
JEDEC  
TO-236MOD  
JEITA  
SC-59  
TOSHIBA  
2-3F1A  
Weight: 0.012g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
RN1407 to 1409  
RN1407 to 1409  
RN1407  
V
V
50  
V
V
CBO  
CEO  
Collector-emitter voltage  
50  
6
7
Emitter-base voltage  
V
V
RN1408  
EBO  
RN1409  
15  
Collector current  
RN1407 to 1409  
RN1407 to 1409  
RN1407 to 1409  
RN1407 to 1409  
I
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
150  
j
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
1985-05  
1
2014-03-01  

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