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RN1416 PDF预览

RN1416

更新时间: 2024-09-27 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
8页 273K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1416 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.51Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 2.13最大集电极电流 (IC):0.1 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):50
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
VCEsat-Max:0.3 VBase Number Matches:1

RN1416 数据手册

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RN1414~RN1418  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1414,RN1415,RN1416  
RN1417,RN1418  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
And Driver Circuit Applications  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2414~RN2418  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN1414  
RN1415  
RN1416  
RN1417  
RN1418  
1
10  
10  
10  
4.7  
10  
2.2  
4.7  
10  
47  
JEDEC  
SC-236MOD  
EIAJ  
SC-59  
TOSHIBA  
Weight: 0.012g  
2-3F1A  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
50  
50  
V
V
CBO  
CEO  
RN1414~1418  
Collector-emitter voltage  
RN1414  
RN1415  
RN1416  
RN1417  
RN1418  
5
6
Emitter-base voltage  
V
V
7
EBO  
15  
25  
Collector current  
I
100  
200  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN1414~1418  
T
j
T
°C  
stg  
1
2001-06-07  

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