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RN1410_07

更新时间： 2024-09-28 04:07:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
5页 261K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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中文翻译

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RN1410_07 数据手册

 浏览型号RN1410_07的Datasheet PDF文件第2页浏览型号RN1410_07的Datasheet PDF文件第3页浏览型号RN1410_07的Datasheet PDF文件第4页浏览型号RN1410_07的Datasheet PDF文件第5页 
RN1410,RN1411  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1410, RN1411  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit: mm  
z With built-in bias resistors  
z Simplified circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2410, RN2411  
Equivalent Circuit  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
JEDEC  
TO-236MOD  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
EIAJ  
SC-59  
TOSHIBA  
Weight: 0.012g  
2-3F1A  
Collector-emitter voltage  
Emitter-base voltage  
5
V
Collector current  
I
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
150  
j
T
stg  
−55~125  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
100  
100  
700  
0.3  
―
nA  
nA  
CBO  
CB  
EB  
CE  
E
I
―
= 5 V, I = 0  
C
EBO  
DC current gain  
h
―
= 5 V, I = 1 mA  
120  
―
―
FE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
―
I
= 5 mA, I = 0.25 mA  
C B  
0.1  
250  
3
V
CE (sat)  
f
V
V
= 10 V, I = 5 mA  
―
―
MHz  
pF  
T
CE  
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
CB E  
6
―
―
ob  
RN1410  
Input resistor  
3.29  
7
4.7  
10  
6.11  
13  
R1  
―
―
kΩ  
RN1411  
1
2007-11-01  
12345

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与RN1410_07相关器件

型号 品牌 获取价格 描述 数据表
RN1411 TOSHIBA

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 		TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1411(TE85L,F) TOSHIBA

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 		Trans Digital BJT NPN 50V 100mA 3-Pin S-Mini T/R
RN1411(TE85R2) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1412 TOSHIBA

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 		Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1412(TE85L) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1412(TE85L,F) TOSHIBA

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 		Small Signal Bipolar Transistor
RN1413 TOSHIBA

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 		Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1413(TE85L) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1413(TE85L,F) TOSHIBA

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 		TRANS PREBIAS NPN 0.2W SMINI
RN1413(TE85L2) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO

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