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RN1411(TE85R2) PDF预览

RN1411(TE85R2)

更新时间： 2024-01-20 22:36:27
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 412K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal

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RN1411(TE85R2) 技术参数

生命周期：Obsolete零件包装代码：SOT-23
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.78
其他特性：BUILT-IN BIAS RESISTOR最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：120JESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：250 MHzBase Number Matches：1

RN1411(TE85R2) 数据手册

 浏览型号RN1411(TE85R2)的Datasheet PDF文件第2页浏览型号RN1411(TE85R2)的Datasheet PDF文件第3页浏览型号RN1411(TE85R2)的Datasheet PDF文件第4页浏览型号RN1411(TE85R2)的Datasheet PDF文件第5页 
RN1410,RN1411  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN1410, RN1411  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z With built-in bias resistors  
Unit: mm  
z Simplified circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2410, RN2411  
Equivalent Circuit  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
JEDEC  
JEITA  
TO-236MOD  
SC-59  
Collector-emitter voltage  
Emitter-base voltage  
TOSHIBA  
2-3F1A  
5
V
Weight: 12 mg (typ.)  
Collector current  
I
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
j
150  
T
stg  
−55 to 125  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
100  
100  
700  
0.3  
―
nA  
nA  
CBO  
CB  
EB  
CE  
E
I
―
= 5 V, I = 0  
C
EBO  
DC current gain  
h
―
= 5 V, I = 1 mA  
120  
―
―
FE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
―
I
= 5 mA, I = 0.25 mA  
C B  
0.1  
250  
3
V
CE (sat)  
f
V
V
= 10 V, I = 5 mA  
―
―
MHz  
pF  
T
CE  
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
CB E  
6
―
―
ob  
RN1410  
Input resistor  
3.29  
7
4.7  
10  
6.11  
13  
R1  
―
―
kΩ  
RN1411  
1
2010-08-20  
12345

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