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RN1327A PDF预览

RN1327A

更新时间: 2024-11-12 04:07:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
11页 211K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1327A 数据手册

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RN1321ARN1327A  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1321A,RN1322A,RN1323A,RN1324A  
RN1325A,RN1326A,RN1327A  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit: mm  
z High current driving is possible.  
z Since bias resisters are built in the transistor,the miniaturization of the  
apparatus by curtailment of the number of parts and laborsaving of an  
assembly are possible.  
z Many kinds of resistance value are lined up in order to support various  
kinds of circuit design.  
z Complementary to RN2321A~RN2327A  
z Low V  
enable to be low power dissipation on high current driving.  
CE(sat)  
Equivalent Circuit And Bias Resistance Values  
1. BASE  
2. EMITTER  
3. COLLECTOR  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1321A  
RN1322A  
RN1323A  
RN1324A  
RN1325A  
RN1326A  
RN1327A  
1
2.2  
4.7  
10  
1
JEDEC  
JEITA  
2.2  
4.7  
10  
10  
10  
10  
SC-70  
2-2E1A  
TOSHIBA  
0.47  
1
Weight: 0.006 g (typ.)  
2.2  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
15  
12  
V
V
CBO  
CEO  
RN1321A~1327A  
Collector-emitter voltage  
Emitter-base voltage  
RN1321A~1324A  
RN1325A, 1326A  
RN1327A  
10  
V
V
5
EBO  
6
Collector current  
I
500  
100  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN1321A~1327A  
T
j
T
stg  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-11-01  

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