Datasheet > RN1401(TE85R)

RN1401(TE85R)

更新时间： 2024-11-12 20:10:31

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
8页	576K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1401(TE85R) 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.76	其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	30
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	250 MHz
Base Number Matches：	1

RN1401(TE85R) 数据手册

RN1401～RN1406

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1401, RN1402, RN1403

RN1404, RN1405, RN1406

Unit: mm

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

z With built-in bias resistors

z Simplified circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2401~RN2406

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ

R2 (kΩ

RN1401

RN1402

RN1403

RN1404

RN1405

RN1406

4.7

JEDEC

TO-236MOD

2.2

4.7

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1401~1406

Collector-emitter voltage

RN1401~1404

RN1405, 1406

Emitter-base voltage

EBO

Collector current

100

200

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1401~1406

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7 8

中文翻译

下载PDF

与RN1401(TE85R)相关器件

型号	品牌	获取价格	描述	数据表
RN1401(TE85R,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1401(TE85R2)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purp
RN1401_07	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1401LF(T	TOSHIBA	获取价格	暂无描述
RN1401S,LF(D	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1402	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1402(F)	TOSHIBA	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
RN1402(T5L,PP,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1402(T5LMIB,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1402(T5LSAN,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

与RN1401(TE85R)相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1401(TE85R)

RN1401(TE85R) 技术参数

RN1401(TE85R) 数据手册

与RN1401(TE85R)相关器件

与RN1401(TE85R)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1401(TE85R)

RN1401(TE85R) 技术参数

RN1401(TE85R) 数据手册

与RN1401(TE85R)相关器件

与RN1401(TE85R)相关文章

您还可以找

您在本页遇到什么问题？