RN1402(F)

更新时间： 2024-01-11 19:32:16

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关小信号双极晶体管光电二极管驱动
页数	文件大小	规格书
8页	577K
描述
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

RN1402(F) 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	风险等级：	5.76
其他特性：	BUILT IN BIAS RESISTANCE RATIO IS 1	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	50	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	250 MHz
Base Number Matches：	1

RN1402(F) 数据手册

RN1401～RN1406

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1401, RN1402, RN1403

RN1404, RN1405, RN1406

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit: mm

z With built-in bias resistors

z Simplified circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2401~RN2406

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ

R2 (kΩ

RN1401

RN1402

RN1403

RN1404

RN1405

RN1406

4.7

2.2

4.7

JEDEC

TO-236MOD

EIAJ

SC-59

TOSHIBA

Weight: 0.012g

2-3F1A

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1401~1406

Collector-emitter voltage

RN1401~1404

RN1405, 1406

Emitter-base voltage

EBO

Collector current

100

200

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1401~1406

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7 8

中文翻译

下载PDF

RN1402(F) 替代型号

型号	品牌	替代类型	描述	数据表
RN1416(TE85L)	TOSHIBA	完全替代	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
RN1115(TE85L)	TOSHIBA	类似代替	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General

与RN1402(F)相关器件

型号	品牌	获取价格	描述	数据表
RN1402(T5L,PP,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1402(T5LMIB,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1402(T5LSAN,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1402(T5RCK,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1402(TE85L,F)	TOSHIBA	获取价格	Trans Digital BJT NPN 50V 100mA 3-Pin S-Mini T/R
RN1402(TE85L2)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purp
RN1402(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purp
RN1402(TE85R,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1402(TE85R2)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purp
RN1402S,LF(D	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

与RN1402(F)相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

4
PMOS管背靠背连接：串联还是并联？
2024-06-28

4
高压电解电容的分类与选型策略
2024-06-28

5
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

9

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1402(F)

RN1402(F) 技术参数

RN1402(F) 数据手册

RN1402(F) 替代型号

与RN1402(F)相关器件

与RN1402(F)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1402(F)

RN1402(F) 技术参数

RN1402(F) 数据手册

RN1402(F) 替代型号

与RN1402(F)相关器件

与RN1402(F)相关文章

您还可以找

您在本页遇到什么问题？