Datasheet > RN1402(T5LMIB,F)

RN1402(T5LMIB,F)

更新时间： 2024-02-22 20:41:56

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
8页	581K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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技术参数
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RN1402(T5LMIB,F) 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	风险等级：	5.76
Is Samacsys：	N	其他特性：	BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	50
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	250 MHz	Base Number Matches：	1

RN1402(T5LMIB,F) 数据手册

RN1401～RN1406

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1401, RN1402, RN1403

RN1404, RN1405, RN1406

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z With built-in bias resistors

z Simplified circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2401 to RN2406

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ

R2 (kΩ

RN1401

RN1402

RN1403

RN1404

RN1405

RN1406

4.7

JEDEC

TO-236MOD

2.2

4.7

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1401 to 1406

Collector-emitter voltage

RN1401 to 1404

RN1405, 1406

Emitter-base voltage

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

200

RN1401 to 1406

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1983-06

2014-03-01

12 3 4 5 6 7 8

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与RN1402(T5LMIB,F)相关器件

型号	品牌	获取价格	描述	数据表
RN1402(T5LSAN,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1402(T5RCK,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1402(TE85L,F)	TOSHIBA	获取价格	Trans Digital BJT NPN 50V 100mA 3-Pin S-Mini T/R
RN1402(TE85L2)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purp
RN1402(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purp
RN1402(TE85R,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1402(TE85R2)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purp
RN1402S,LF(D	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1403	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1403(F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59

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