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RN1401 PDF预览

RN1401

更新时间: 2024-11-11 21:54:39
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
7页 255K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1401 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.74
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.4 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.3 V
Base Number Matches:1

RN1401 数据手册

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RN1401,RN1402,RN1403,RN1404,RN1405,RN1406  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1401,RN1402,RN1403  
RN1404,RN1405,RN1406  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
And Driver Circuit Applications  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2401~RN2406  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k  
R2 (kΩ  
RN1401  
RN1402  
RN1403  
RN1404  
RN1405  
RN1406  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
TO-236MOD  
EIAJ  
SC-59  
TOSHIBA  
Weight: 0.012g  
2-3F1A  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1401~1406  
Collector-emitter voltage  
RN1401~1404  
RN1405, 1406  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
200  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN1401~1406  
T
j
T
°C  
stg  
1
2001-06-07  

RN1401 替代型号

型号 品牌 替代类型 描述 数据表
RN1105FV TOSHIBA

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