RN1323A

更新时间： 2024-01-30 15:06:02

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关小信号双极晶体管光电二极管驱动
页数	文件大小	规格书
11页	211K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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技术参数
数据手册

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RN1323A 技术参数

生命周期：	Obsolete	零件包装代码：	SC-70
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.84
Is Samacsys：	N	其他特性：	BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：	0.5 A	集电极-发射极最大电压：	12 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	100
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.1 W
认证状态：	Not Qualified	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	300 MHz	Base Number Matches：	1

RN1323A 数据手册

RN1321A∼RN1327A

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1321A,RN1322A,RN1323A,RN1324A

RN1325A,RN1326A,RN1327A

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit: mm

z High current driving is possible.

z Since bias resisters are built in the transistor,the miniaturization of the

apparatus by curtailment of the number of parts and laborsaving of an

assembly are possible.

z Many kinds of resistance value are lined up in order to support various

kinds of circuit design.

z Complementary to RN2321A~RN2327A

z Low V

enable to be low power dissipation on high current driving.

CE(sat)

Equivalent Circuit And Bias Resistance Values

1. BASE

2. EMITTER

3. COLLECTOR

Type No.

R1 (kΩ)

R2 (kΩ)

RN1321A

RN1322A

RN1323A

RN1324A

RN1325A

RN1326A

RN1327A

2.2

4.7

JEDEC

JEITA

⎯

2.2

4.7

SC-70

2-2E1A

TOSHIBA

0.47

Weight: 0.006 g (typ.)

2.2

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1321A~1327A

Collector-emitter voltage

Emitter-base voltage

RN1321A~1324A

RN1325A, 1326A

RN1327A

EBO

Collector current

500

100

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1321A~1327A

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7...11

中文翻译

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与RN1323A相关器件

型号	品牌	获取价格	描述	数据表
RN1324A	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1324A(TE85L)	TOSHIBA	获取价格	RN1324A(TE85L)
RN1324A(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,12V V(BR)CEO,500MA I(C),SC-70
RN1325A	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1325A(TE85L)	TOSHIBA	获取价格	RN1325A(TE85L)
RN1326A	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1326A(TE85L)	TOSHIBA	获取价格	RN1326A(TE85L)
RN1327A	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN-134	ETC	获取价格	RN-131G & RN-131C 802.11 b/g Wireless LAN Module
RN1401	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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