Datasheet > RM80N150T2

RM80N150T2

更新时间： 2024-11-06 20:03:55

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
7页	251K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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RM80N150T2 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.76	Base Number Matches：	1

RM80N150T2 数据手册

RM80N150T2

N-Channel Super Trench Power MOSFET

Description

The RM80N150T2 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

ƽ V_DS=150V,I_D=80A

R_DS(ON)<12.5mΩ @ V_GS=10V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous rectification

Halogen-free

TO-220-3L top view

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

80N150

RM80N150T2

TO-220-3L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

VDS

Limit

150

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VGS

56.6

I_D

I_D(100ć)

I_DM

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

320

Maximum Power Dissipation

210

P_D

Derating factor

Single pulse avalanche energy^{(Note 5)}

1.4

W/ć

E_AS

672

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2019-06/15

REV:O

12 3 4 5 6 7

中文翻译

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RM80N30DF	RECTRON	获取价格	Power Field-Effect Transistor,
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RM80N60DF	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 3.5 mOhms;Total Gate Charge (nQ
RM80N60LD	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 7 mOhms;Total Gate Charge (nQ)
RM80N650T7	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 37 mOhms;Total Gate Charge (nQ
RM80N75HD	RECTRON	获取价格	Vdss (V) : 75 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 6.5 mOhms;Total Gate Charge (nQ
RM80N75T2	RECTRON	获取价格	Vdss (V) : 75 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 6.5 mOhms;Total Gate Charge (nQ
RM80N80HD	RECTRON	获取价格	Vdss (V) : 80 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 7.2 mOhms;Total Gate Charge (nQ