Datasheet > RM80N80T2

RM80N80T2

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	606K
描述
Vdss (V) : 80 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 7.0 mOhms;Total Gate Charge (nQ) typ : 90 nQ;Maximum Power Dissipation (W) : 170 W;Vgs(th) (typ) : 2.85 V;Input Capacitance (Ciss) : 4100 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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技术参数
数据手册

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RM80N80T2 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.72	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	MATTE TIN OVER NICKEL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

RM80N80T2 数据手册

RM80N80T2

N-Channel Enhancement Mode Power MOSFET

Description

The RM80N80T2 uses advanced trench technology and design to

provide excellent R_DS(ON)with low gate charge. This device is

suitable for use in PWM, load switching and general purpose

applications.

General Features

Schematic diagram

ƽ V_DS=80V,I_D=80A

R_DS(ON)< 8.5mΩ @ V_GS=10V (Typ:7.0mΩ)

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Special designed for convertors and power controls

ƽ Good stability and uniformity with high E_AS

80N80

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Marking and pin assignment

Application

ƽ Power switching application

ƽ Hard switched and High frequency circuits

ƽ Uninterruptible power supply

Halogen-free

100% UIS TESTED!

100% ∆Vds TESTED!

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

80N80

RM80N80T2

TO-220-3L

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

I_D(100ć)

I_DM

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

320

170

Maximum Power Dissipation

Peak diode recovery voltage

Derating factor

P_D

dv/dt

V/ns

W/ć

1.13

620

Single pulse avalanche energy^{(Note 5)}

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2018-06/15

REV:O

12 3 4 5 6 7 8

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