Datasheet > RM80N80HD

RM80N80HD

更新时间： 2024-06-27 12:13:33

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	330K
描述
Vdss (V) : 80 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 7.2 mOhms;Total Gate Charge (nQ) typ : 100 nQ;Maximum Power Dissipation (W) : 170 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 4400 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-263(D2-PAK)

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RM80N80HD 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.72
Base Number Matches：	1

RM80N80HD 数据手册

RM80N80HD

N-Channel Enhancement Mode Power MOSFET

Description

The RM80N80HD uses advanced trench technology and design

to provide excellent R_DS(ON)with low gate charge. This device is

suitable for use in PWM, load switching and general purpose

applications.

General Features

ƽ V_DS=80V,I_D=80A

Schematic diagram

R_DS(ON)< 8.5mΩ @ V_GS=10V (Typ:7.2mΩ)

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Special designed for convertors and power controls

ƽ Good stability and uniformity with high E_AS

80N80

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Marking and pin assignment

Application

ƽ Power switching application

ƽ Hard switched and High frequency circuits

ƽ Uninterruptible power supply

Halogen-free

100% UIS TESTED!

100% ∆Vds TESTED!

TO-263-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

80N80

ꢀ

-ꢀ

RM80N80HD

TO-263-2L

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

I_D(100ć)

I_DM

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

320

Maximum Power Dissipation

Peak diode recovery voltage

Derating factor

170

P_D

dv/dt

V/ns

W/ć

1.13

620

Single pulse avalanche energy^{(Note 5)}

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2018-06/15

REV:O

12 3 4 5 6 7 8

中文翻译

下载PDF

与RM80N80HD相关器件

型号	品牌	获取价格	描述	数据表
RM80N80T2	RECTRON	获取价格	Vdss (V) : 80 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 7.0 mOhms;Total Gate Charge (nQ
RM80P40LD	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 5.8 mOhms;Total Gate Charge (nQ
RM80P40LDV	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 5.8 mOhms;Total Gate Charge (nQ
RM81B	ETC	获取价格	Optoelectronic
RM-81B	INFINEON	获取价格	mask-diffused gaasp monolithic led
RM8200N	RAYTHEON	获取价格	D Flip-Flop, 10-Func, Positive Edge Triggered, TTL, MDFP24,
RM8201R	RAYTHEON	获取价格	D Flip-Flop, 10-Func, Positive Edge Triggered, TTL, CDIP24,
RM8202N	RAYTHEON	获取价格	D Flip-Flop, 10-Func, Positive Edge Triggered, TTL, MDFP24,
RM8203R	RAYTHEON	获取价格	D Flip-Flop, 10-Func, Positive Edge Triggered, TTL, CDIP24,
RM8205F	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 6.0 A;Rds-on (typ) (mOhms) : 11.5 mOhms;Maximum Power Dissi