Datasheet > RM80N30LD

RM80N30LD

更新时间： 2024-06-27 12:12:18

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	317K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 5.5 mOhms;Total Gate Charge (nQ) typ : 51 nQ;Maximum Power Dissipation (W) : 83 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 2330 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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技术参数
数据手册

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RM80N30LD 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.71	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Matte Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

RM80N30LD 数据手册

RM80N30LD

N-Channel Enhancement Mode Power MOSFET

Description

The RM80N30LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=30V,I_D=80A

Schematic diagram

R_DS(ON)<6.5mΩ @ V_GS=10V

R_DS(ON)< 10mΩ @ V_GS=5V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

Application

Marking and pin assignment

ƽꢀ Power switching application

ƽꢀ Hard switched and high frequency circuits

ƽꢀ Uninterruptible power supply

100% UIS TESTED!

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

80N30

RM80N30LD

TO-252-2L

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

170

I_DM

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.56

W/ć

E_AS

306

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2016-10

REV:O15

12 3 4 5 6 7

中文翻译

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