Datasheet > RM80N650T7

RM80N650T7

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	255K
描述
Vdss (V) : 650 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 37 mOhms;Total Gate Charge (nQ) typ : 191.6 nQ;Maximum Power Dissipation (W) : 465 W;Vgs(th) (typ) : 4 V;Input Capacitance (Ciss) : 9886 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247

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中文翻译

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数据手册

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RM80N650T7 数据手册

ꢀ ꢀ

RM80N650T7

Super-junction Power Mosfet

Feature

ꢀ 650V,80A

R_DS

_˅ꢀ41m¡˜V_GS=10V

ꢀ Ultra-fast body didode

ꢀ Good Reliability

ꢀ Fast switching speed

ꢀ Extremely low losses due to very Eon and Eoff

ꢀ Qualified for industrial grade applications according to JEDEC

ꢀ RoHs compliant

TO-247-3L

Application

ꢀ Swith Mode Power Supply (SMPS )

ꢀ Uninterruptible Power Supply (UPS )

ꢀ Power Factor Correction (PFC)

ꢀ Charge

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢀ Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

80N650

TO-247-3L

600 per box

RM80N650T7

ABSOLUTE MAXIMUM RATINGS (T_a=25ćć unless otherwise noted)

Parameter

Symbol

V_DS

V_GSS

I_D

Value

650

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T_a=25ć)

Pulsed Drain Current ⁽¹⁾

I_DM

240

Avalanche Current (Signle pulse) ⁽¹⁾

Single Pulsed Avalanche Energy ⁽²⁾

Power Dissipation

I_AS

E_AS

P_D

1280

465

Thermal Resistance from Junction to Ambient⁽⁴⁾

R_θJA

T_J

ć/W

Junction Temperature

150

Storage Temperature

T_STG

-55~ +150

2022-06/69

REV:O

ꢀ

12 3 4 5 6

中文翻译

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与RM80N650T7相关器件

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