Datasheet > RM80N60LD

RM80N60LD

更新时间： 2024-09-14 18:09:23

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	324K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 7 mOhms;Total Gate Charge (nQ) typ : 90 nQ;Maximum Power Dissipation (W) : 110 W;Vgs(th) (typ) : 2.8 V;Input Capacitance (Ciss) : 4000 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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中文翻译

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技术参数
数据手册

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RM80N60LD 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.72
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

RM80N60LD 数据手册

RM80N60LD

Enhancement Mode Power MOSFET

Description

The RM80N60LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

Schematic diagram

General Features

ƽ V_DS=60V,I_D=80A

R_DS(ON)<8.5mΩ @ V_GS=10V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

Marking and pin assignment

Application

ƽ PWM

ƽ Load Switching

100% UIS TESTED!

100% ∆Vds TESTED!

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

80N60

RM80N60LD

TO-252-2L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VGS

I_D

I_D(100ć)

I_DM

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

56.5

180

110

0.73

390

Maximum Power Dissipation

P_D

Derating factor

W/ć

Single pulse avalanche energy ^{(Note 5)}

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2016-07

REV:O15

12 3 4 5 6 7

中文翻译

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