Datasheet > RM110N82T2

RM110N82T2

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	258K
描述
Vdss (V) : 82 V;Id @ 25C (A) : 110 A;Rds-on (typ) (mOhms) : 5.9 mOhms;Total Gate Charge (nQ) typ : 120 nQ;Maximum Power Dissipation (W) : 200 W;Vgs(th) (typ) : 3 V;Input Capacitance (Ciss) : 6400 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM110N82T2 数据手册

RM110N82T2

N-Channel Enhancement Mode Power MOSFET

Description

The RM110N82T2 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS= 82V,I_D=110A

R_DS(ON)< 7mΩ @ V_GS=10V (Typ:5.9mΩ)

Schematic diagram

ƽ Special process technology for high ESD capability

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

pin assignment

TO-220-3L top view

Halogen-free

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

110N82

RM110N82T2

TO-220-3L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

110

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

350

I_DM

Maximum Power Dissipation

200

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

1.33

W/ć

E_AS

950

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2019-06/15

REV:O

12 3 4 5 6 7

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