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RM11A PDF预览

RM11A

更新时间: 2024-11-16 22:23:47
品牌 Logo 应用领域
EIC 整流二极管
页数 文件大小 规格书
2页 42K
描述
SILICON RECTIFIER DIODES

RM11A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.76Is Samacsys:N
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.92 V最大非重复峰值正向电流:100 A
元件数量:1最高工作温度:140 °C
最大输出电流:1.2 A最大重复峰值反向电压:600 V
子类别:Rectifier Diodes表面贴装:NO
Base Number Matches:1

RM11A 数据手册

 浏览型号RM11A的Datasheet PDF文件第2页 
SILICON RECTIFIER DIODES  
RM11A - RM11C  
PRV : 600 - 1000 Volts  
Io : 1.2 Amperes  
D2  
FEATURES :  
1.00 (25.4)  
0.161 (4.10)  
MIN.  
* High current capability  
* High surge current capability  
* High reliability  
0.154 (3.90)  
0.284 (7.20)  
0.268 (6.84)  
* Low reverse current  
* Low forward voltage drop  
1.00 (25.4)  
0.034 (0.86)  
MIN.  
MECHANICAL DATA :  
* Case : D2 Molded plastic  
0.028 (0.71)  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.465 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherwise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL  
VRRM  
RM11A  
600  
RM11B  
800  
RM11C  
1000  
UNITS  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
VRMS  
420  
560  
700  
Maximum DC Blocking Voltage  
VDC  
600  
800  
1000  
Maximum Average Forward Current  
0.375"(9.5mm) Lead Length Ta = 70 °C  
Peak Forward Surge Current  
IF  
1.2  
A
IFSM  
100  
A
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
Maximum Forward Voltage at IF = 1.5 Amps.  
VF  
IR  
0.92  
V
mA  
10  
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Junction Temperature Range  
Storage Temperature Range  
Ta = 25 °C  
IR(H)  
CJ  
50  
30  
Ta = 100 °C  
mA  
pF  
50  
°C/W  
°C  
RqJA  
TJ  
- 65 to + 175  
- 65 to + 175  
TSTG  
°C  
Notes :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.  
Page 1 of 2  
Rev. 01 : Mar 23, 2002  

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