Datasheet > RM11C

RM11C

更新时间： 2024-11-17 03:36:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		二极管
页数	文件大小	规格书
2页	50K
描述
PLASTIC SILICON RECTIFIER

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中文翻译

获取价格

数据手册

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RM11C 数据手册

GALAXY ELECTRICAL

RM11A(Z)---RM11C(Z)

VOLTAGE RANGE: 600 --- 1000 V

CURRENT: 1.2 A

PLASTIC SILICON RECTIFIER

FEATURES

Low cost

Diffused junction

DO - 15L

Low leakage

Low forward voltage drop

High current capability

Easily cleaned witn Freon,Alcohol,lsopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

MECHANICAL DATA

Case:JEDEC DO-15L,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.017 ounces,0.48 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

RM11A

RM11B

RM11C

UNITS

Maximum recurrent peak reverse voltage

Maximum RMS voltage

600

420

600

800

560

800

1000

700

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

1000

Maximum average forw ard rectified current

1.2

I_F(AV)

9.5mm lead length,

@T_A=75

Peak forw ard surge current

I_FSM

100.0

0.92

8.3ms single half-sine-w ave

superimposed on rated load @T_J=125

Maximum instantaneous forw ard voltage

@ 1.5 A

V_F

Maximum reverse current

@T_A=25

5.0

50.0

I_R

at rated DC blocking voltage @T_A=100

Typical junction capacitance

Typical thermal resistance

(Note1)

(Note2)

C_J

R_θ

/ W

Operating junction temperature range

Storage temperature range

-55-----+150

T_J

T_STG

NOTE: 1. Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.

2. Thermal resistance f rom junction to ambient.

www.galaxycn.com

BLGALAXY ELECTRICAL

Document Number 0260029

中文翻译

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