Datasheet > RM110N90DF

RM110N90DF

更新时间： 2024-11-18 18:09:23

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
5页	895K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 80 A;Rds-on (typ) (mOhms) : 3.5 mOhms;Total Gate Charge (nQ) typ : 65 nQ;Maximum Power Dissipation (W) : 70 W;Vgs(th) (typ) : 1.8 V;Input Capacitance (Ciss) : 5040 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6

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RM110N90DF 数据手册

RM110N90DF

N-Channel Trench MOSFET

Features

Description

Symbol

_DSS≥90V

Source(S)

Gate

1,2,3

≦4.7mΩ@V_GS=10V

R_DS(ON)

High Efficiency

improved dv/dt capability

Low Dense Cell Design

Drain(D)

5,6,7,8

Reliable and Rugged

Application

Networking, Load Swtich

LED lighting , Quick Charger

Halogen-free

DFN 5*6

Simplified Outline

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RM110N90DF

DFN5*6

110N90

ꢀ

Absolute Maximum Rating

Symbol

Parameter

Condition

Value

Unit

V_DS

Drain-Source Voltage

110

T_C=25℃

T_C=70℃

I_D

Continuous Drain Current

V_GS

I_DM

P_D

Gate-Source Voltage

±20

T_C=25℃

Pulsed Drain Current

450

Total Power Dissipation

115

℃

EAS

T_STG

T_J

185

Single Pulse Avalanche Energy

Storage Temperature Range

Operating Junction Temperature

-55 to 150

2022-12/119

REV:O

12 3 4 5

中文翻译

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