Datasheet > RM115N65T2

RM115N65T2

更新时间： 2024-11-18 18:09:59

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	281K
描述
Vdss (V) : 65 V;Id @ 25C (A) : 115 A;Rds-on (typ) (mOhms) : 3.9 mOhms;Total Gate Charge (nQ) typ : 54 nQ;Maximum Power Dissipation (W) : 160 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 29040 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM115N65T2 数据手册

RM115N65T2

N-Channel Enhancement Mode Power MOSFET

Description

The RM115N65T2 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Feature

Schematic diagram

V_DS=65V,I_D=115A

R_DS(ON)< 4.7mΩ @ V_GS=10V

R_DS(ON)< 8.0mΩ @ V_GS=4.5V

Special process technology for high ESD capability

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Halogen-free

D S

TO-220-3L top view

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

115N65

RM115N65T2

TO-220-3L

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

+20/-12

VGS

115

I_D

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_D(100

I_DM

)

460

2019-06/57

REV:O

12 3 4 5 6 7

中文翻译

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