Datasheet > RM110N85T2

RM110N85T2

更新时间： 2024-11-18 18:09:43

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	274K
描述
Vdss (V) : 85 V;Id @ 25C (A) : 110 A;Rds-on (typ) (mOhms) : 5 mOhms;Total Gate Charge (nQ) typ : 54 nQ;Maximum Power Dissipation (W) : 145 W;Vgs(th) (typ) : 3.3 V;Input Capacitance (Ciss) : 3870 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM110N85T2 数据手册

RM110N85T2

N-Channel Super Trench

Power MOSFET

Description

The RM110N85T2 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

ƽ V_DS=85V,I_D=110A

R_DS(ON)<6mΩ @ V_GS=10V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

Marking and pin assignment

ƽ 100% UIS tested

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

100% ∆Vds TESTED!

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

110N85

RM110N85T2

TO-220-3L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

110

I_D

I_D(100ć)

I_DM

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

320

145

0.97

700

Maximum Power Dissipation

P_D

Derating factor

W/ć

Single pulse avalanche energy^{(Note 5)}

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2016-10

REV:O15

12 3 4 5 6 7

中文翻译

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