Datasheet > RM110N150T2

RM110N150T2

更新时间： 2024-09-16 18:09:19

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1478K
描述
Vdss (V) : 150 V;Id @ 25C (A) : 113 A;Rds-on (typ) (mOhms) : 7.9 mOhms;Total Gate Charge (nQ) typ : 52 nQ;Maximum Power Dissipation (W) : 273 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 4362 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM110N150T2 数据手册

RM110N150T2

N-ChannelSuper Trench

Power MOSFET

Description

The RM110N150T2 uses Super Trench technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

R^DS(ON)and Q^g. This device is ideal for high-frequency

switching and synchro

nous rectification.

Schematic diagram

General Features

ƽ VDS =150V,ID =110A

mΩ

RDS(ON) <12

RDS(ON) <15

@ VGS=10V

@ VGS=6 V

ƽ Excellent gate charge x RDS(on) product(FOM)

ƽ Very low on-resistance RDS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

TO-220-3L top view

ƽ 100% UIS tested

Halogen-free

100% UIS TESTED!

Application

ƽ DC/DC Converter

100% ꢀVds TESTED!

ƽ Ideal for high-frequency switching and synchronous

rectification

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

-ꢀ

TO-220-3L

-ꢀ

110N150

RM110N150T2

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

150

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

110

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

430

273

I_DM

Maximum Power Dissipation

P_D

Derating factor

W/ć

Single pulse avalanche energy ^{(Note 5)}

E_AS

320

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_ꢀJC

0.55

ć/W

2023-06/69

REV:

12 3 4 5 6 7

中文翻译

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