Datasheet > RM10N600LD

RM10N600LD

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	1856K
描述
Vdss (V) : 600 V;Id @ 25C (A) : 10.2 A;Rds-on (typ) (mOhms) : 268 mOhms;Total Gate Charge (nQ) typ : 17.9 nQ;Maximum Power Dissipation (W) : 67.9 W;Vgs(th) (typ) : 3.3 V;Input Capacitance (Ciss) : 420 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-252(D-PAK)

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RM10N600LD 数据手册

RM10N600LD

N-Channel Enhancement Mode Power MOSFET

General Description

The RM10N600LD use advanced trench gate super

junction technology and design to provide excellent R^DS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

Featuresꢀ

ƽ V_DS=600V,I_D=10.2A

R_DS(ON)=268mΩ (typical) @ V_GS=10V

ƽ New technology for high voltage device

ƽ Low on-resistance and low conduction losses

ƽ Small package

Schematic diagram

ƽ Ultra Low Gate Charge cause

ƽ 100% Avalanche Tested

Marking and pin assignment

ƽ ROHS compliant

Halogen-free

ꢀ

Applicationꢀ

ƽꢀ Power factor correction˄PFC˅

ƽꢀ Switched mode power supplies(SMPS)

ƽꢀ Uninterruptible Power Supply˄UPS˅ꢀ

TO-252-2L top view

ꢀ

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2500 units

10N600

RM10N600LD

TO-252-2L

Ø330mm

12mm

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

600

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

10..2

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

I_DM

6.5.

30..6

67.9

175

Maximum Power Dissipation

Single pulse avalanche energy^{(Note 5)}

P_D

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2020-08/108

REV:O

12 3 4 5 6 7...9

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