RM11

更新时间： 2024-11-20 22:23:47

品牌	Logo	应用领域
EIC		整流二极管
页数	文件大小	规格书
2页	42K
描述
SILICON RECTIFIER DIODES

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中文翻译

获取价格

数据手册

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RM11 数据手册

SILICON RECTIFIER DIODES

RM11A - RM11C

PRV : 600 - 1000 Volts

Io : 1.2 Amperes

FEATURES :

1.00 (25.4)

0.161 (4.10)

MIN.

* High current capability

* High surge current capability

* High reliability

0.154 (3.90)

0.284 (7.20)

0.268 (6.84)

* Low reverse current

* Low forward voltage drop

1.00 (25.4)

0.034 (0.86)

MIN.

MECHANICAL DATA :

* Case : D2 Molded plastic

0.028 (0.71)

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.465 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL

VRRM

RM11A

600

RM11B

800

RM11C

1000

UNITS

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

VRMS

420

560

700

Maximum DC Blocking Voltage

VDC

600

800

1000

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 70 °C

Peak Forward Surge Current

1.2

IFSM

100

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at IF = 1.5 Amps.

0.92

Maximum DC Reverse Current

at rated DC Blocking Voltage

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Junction Temperature Range

Storage Temperature Range

Ta = 25 °C

IR(H)

Ta = 100 °C

°C/W

°C

RqJA

- 65 to + 175

TSTG

°C

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V_DC

(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

Page 1 of 2

Rev. 01 : Mar 23, 2002

中文翻译

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