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RM10TN-H PDF预览

RM10TN-H

更新时间: 2024-11-17 22:08:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 二极管局域网
页数 文件大小 规格书
2页 31K
描述
Three-Phase Diode Bridge Modules

RM10TN-H 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:R-XUFM-X5
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.65外壳连接:ISOLATED
配置:BRIDGE, 6 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.5 V
JESD-30 代码:R-XUFM-X5最大非重复峰值正向电流:200 A
元件数量:6相数:3
端子数量:5最高工作温度:125 °C
最低工作温度:-40 °C最大输出电流:12 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:800 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RM10TN-H 数据手册

 浏览型号RM10TN-H的Datasheet PDF文件第2页 
RM10TN-H  
A
D
G
S
H
E
F
R
B
Q
R "Y"  
P
Z
φ"X"  
+
~ ~  
-
~
TYP  
Description:  
K
N
L
Mitsubishi Three-Phase Diode  
Bridge Modules are designed for  
use in applications requiring rectifi-  
cation of three-phase AC lines into  
DC voltage. Each module consists  
of six diodes and the interconnect  
required to form a complete three-  
phase bridge circuit. Each diode is  
electrically insulated from the  
mounting base plate for easy  
mounting on a common heatsink  
with other components.  
J
T
C
W
M
V
U
Features:  
ٗ Isolated Mounting  
ٗ Metal Base Plate  
+
ٗ Low Thermal Impedance  
~
~ ~  
-
Outline Drawing and Circuit Diagram  
Applications:  
ٗ Motor Control  
Dimensions  
Inches  
2.83  
1.18  
0.35  
2.55  
0.59  
0.54  
2.32  
2.21  
0.48  
0.40  
1.60  
0.05  
Millimeters  
71.8  
Dimensions  
Inches  
0.16  
0.02  
0.55  
0.20  
0.35  
0.14  
0.45  
0.71  
0.06  
0.16  
0.16  
0.08  
Millimeters  
4.0  
ٗ Inverters  
ٗ UPS  
A
B
C
D
E
F
N
P
Q
R
S
T
30.0  
0.6  
9.0  
14.0  
5.0  
64.8  
Ordering Information:  
15.0  
9.0  
13.7  
3.5  
RM10TN-H  
G
H
J
58.8  
U
V
W
X
Y
Z
11.5  
18.0  
1.5  
56.2  
12.08  
10.16  
40.64  
1.20  
K
L
4.0  
4.0  
M
2.0  
Sep.1998  

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