Datasheet > RB215T-40_11

RB215T-40_11

更新时间： 2024-11-06 09:37:55

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	987K
描述
Schottky barrier diode

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RB215T-40_11 数据手册

Data Sheet

Schottky barrier diode

RB215T-40

Applications

Dimensions (Unit : mm)

Structure

Switching power supply

Features

(1) (2) (3)

1) Cathode common dual type.(TO-220)

2) Low I^R

3) High reliability

215

Construction

Silicon epitaxial planar

Absolute maximum ratings (Ta=25C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current(*1)

Forward current surge peak (60Hz/1cyc) (*1)

Junction temperature

100

I_FSM

150

C

Storage temperature

40 to 150

Tstg

(*1)Business frequencies, 1/2 Io per diode, Tc=121C

Electrical characteristic (Ta=25C)

Parameter

Conditions

Symbol

V_F

Min. Typ. Max.

Unit

Forward voltage

Reverse current

Thermal impedance

0.55

500

I_F=10A

I_R

μA

V_R=40V

jc

1.75

C/W

junction to case

www.rohm.com

2011.04 - Rev.E

1/3

12 3 4

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