Datasheet > RB215T-60_10

RB215T-60_10

更新时间： 2024-11-06 06:07:11

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	302K
描述
Schottky barrier diode

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RB215T-60_10 数据手册

Schottky barrier diode

RB215T-60

Applications

 Dimensions (Unit : mm)

Structure

Switching power supply

4.5±0.3

ꢀꢀꢀ 0.1

2.8±0.2

ꢀꢀꢀ 0.1

10.0±0.3

ꢀꢀꢀ 0.1

(1) (2) (3)

Features

1)Cathode common type.(TO-220)

2)Low IR

3)High reliability

①

1.2

Construcion

Silicon epitaxal planar

1.3

0.8

(1) (2) (3)

0.7±0.1

0.05

2.6±0.5

ROHM : ＴO220FN

Manufacture Date

①

Absolute maximum ratings(Ta=25C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current(*1)

Forward current surge peak (60Hz/1cyc) (*1)

Junction temperature

100

I_FSM

150

C

Storage temperature

-40 to +150

Tstg

(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=116C

Elecrical characteristic(Ta=25C)

Parameter

Conditions

Symbol

V_F

Min. Typ. Max.

Unit

Forward voltage

Reverse current

Thermal impedance

0.58

600

I_F=10A

I_R

μA

V_R=60V

1.75

junction to case

 jc

C/W

www.rohm.com

2010.03 - Rev.C

1/3

12 3 4

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