Datasheet > RB215T-90_10

RB215T-90_10

更新时间： 2024-09-16 06:07:11

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	302K
描述
Schottky barrier diode

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RB215T-90_10 数据手册

Schottky barrier diode

RB215T-90

Applications

Dimensions (Unit : mm)

Structure

General rectification

(Common cathode dual chip)

4.5±0.3

ꢀꢀꢀ 0.1

2.8±0.2

ꢀꢀꢀ 0.1

10.0±0.3

ꢀꢀꢀ 0.1

(1) (2) (3)

Features

1) Small power mold type.(PMDU)

2) Low I_R

①

3) High reliability

1.2

1.3

0.8

Construction

Silicon epitaxial planar

(1) (2) (3)

0.7±0.1

0.05

2.6±0.5

ROHM : ＴO220FN

Manufacture Date

①

Absolute maximum ratings (Ta=25C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive)

Reverse voltage (DC)

Average rectified forward current(*1)

Forward current surge peak (60Hz/1cyc) (*1)

Junction temperature

100

150

I_FSM

C

Storage temperature

-40 to +150

Tstg

(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=110C

Electrical characteristic (Ta=25C)

Parameter

Conditions

Symbol

Min. Typ. Max.

Unit

V_F

I_R

Forward voltage

Reverse current

0.75

400

I_F=10A

μA

V_R=90V

Thermal impedance

1.75

junction to case

jc

C/W

2010.03 - Rev.D

www.rohm.com

1/3

12 3 4

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