生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-D7 |
Reach Compliance Code: | unknown | 风险等级: | 5.8 |
Is Samacsys: | N | 最大集电极电流 (IC): | 15 A |
配置: | COMPLEX | 最小直流电流增益 (hFE): | 50 |
最大降落时间(tf): | 3000 ns | JESD-30 代码: | R-PUFM-D7 |
元件数量: | 2 | 端子数量: | 7 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 100 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Power |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
VCEsat-Max: | 2 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
QM15HA-H | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15KD-HB | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15TB-24 | MITSUBISHI |
获取价格 |
Power Bipolar Transistor, 15A I(C), 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin, MODULE | |
QM15TB-24B | MITSUBISHI |
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Power Bipolar Transistor, 15A I(C), 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin, MODULE | |
QM15TB2H | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) | |
QM15TB-2H | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15TB2HB | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) | |
QM15TB-2HB | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15TD-9B | MITSUBISHI |
获取价格 |
Power Bipolar Transistor, 15A I(C), 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin, MODULE | |
QM15TD-H | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE |