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QM15KD-HB PDF预览

QM15KD-HB

更新时间: 2024-09-16 22:18:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率双极晶体管局域网
页数 文件大小 规格书
6页 92K
描述
MEDIUM POWER SWITCHING USE INSULATED TYPE

QM15KD-HB 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-D16
Reach Compliance Code:unknown风险等级:5.8
Is Samacsys:N最大集电极电流 (IC):15 A
配置:COMPLEX最小直流电流增益 (hFE):250
JESD-30 代码:R-PUFM-D16元件数量:6
端子数量:16最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):76 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
晶体管元件材料:SILICONBase Number Matches:1

QM15KD-HB 数据手册

 浏览型号QM15KD-HB的Datasheet PDF文件第2页浏览型号QM15KD-HB的Datasheet PDF文件第3页浏览型号QM15KD-HB的Datasheet PDF文件第4页浏览型号QM15KD-HB的Datasheet PDF文件第5页浏览型号QM15KD-HB的Datasheet PDF文件第6页 
MITSUBISHI TRANSISTOR MODULES  
QM15KD-HB  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
QM15KD-HB  
IC  
Collector current .......................... 15A  
VCEX Collector-emitter voltage ........... 600V  
hFE DC current gain.............................250  
Insulated Type  
UL Recognized  
Yellow Card No. E80276 (N)  
File No. E80271  
APPLICATION  
Inverters, Servo drives, DC motor controllers, NC equipment, Welders.  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
11 11 11  
10.5 10.5 18.5  
2–φ5.5  
12.5  
R6  
BuP BvP BwP  
P
K
K
P
U
V
W
BuP  
U
BvP  
V
BwP  
W
R
S
T
A
N
R
S
T
BuN  
BwN  
BvN  
BuN  
18  
18  
15  
8
BwN  
BvN  
93  
A
N
110  
LABEL  
Tab#110, t=0.5  
Tab#250, t=0.8  
Feb.1999  

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