生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-D16 |
Reach Compliance Code: | unknown | 风险等级: | 5.8 |
Is Samacsys: | N | 最大集电极电流 (IC): | 15 A |
配置: | COMPLEX | 最小直流电流增益 (hFE): | 250 |
JESD-30 代码: | R-PUFM-D16 | 元件数量: | 6 |
端子数量: | 16 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 76 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
QM15TB-24 | MITSUBISHI |
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Power Bipolar Transistor, 15A I(C), 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin, MODULE | |
QM15TB-24B | MITSUBISHI |
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Power Bipolar Transistor, 15A I(C), 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin, MODULE | |
QM15TB2H | ETC |
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TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) | |
QM15TB-2H | MITSUBISHI |
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MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15TB2HB | ETC |
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TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) | |
QM15TB-2HB | MITSUBISHI |
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MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15TD-9B | MITSUBISHI |
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Power Bipolar Transistor, 15A I(C), 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin, MODULE | |
QM15TD-H | MITSUBISHI |
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MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15TD-HB | MITSUBISHI |
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MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15TG9B | ETC |
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TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 15A I(C) |