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QM15TD-HB PDF预览

QM15TD-HB

更新时间: 2024-09-16 22:18:51
品牌 Logo 应用领域
三菱 - MITSUBISHI 开关
页数 文件大小 规格书
5页 76K
描述
MEDIUM POWER SWITCHING USE INSULATED TYPE

QM15TD-HB 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-D17
Reach Compliance Code:unknown风险等级:5.8
最大集电极电流 (IC):15 A配置:COMPLEX
最小直流电流增益 (hFE):250最大降落时间(tf):2000 ns
JESD-30 代码:R-PUFM-D17元件数量:6
端子数量:17最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified子类别:BIP General Purpose Power
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER晶体管元件材料:SILICON
VCEsat-Max:2 VBase Number Matches:1

QM15TD-HB 数据手册

 浏览型号QM15TD-HB的Datasheet PDF文件第2页浏览型号QM15TD-HB的Datasheet PDF文件第3页浏览型号QM15TD-HB的Datasheet PDF文件第4页浏览型号QM15TD-HB的Datasheet PDF文件第5页 
MITSUBISHI TRANSISTOR MODULES  
QM15TD-HB  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
QM15TD-HB  
IC  
Collector current .......................... 15A  
VCEX Collector-emitter voltage ........... 600V  
hFE DC current gain.............................250  
Insulated Type  
UL Recognized  
Yellow Card No. E80276 (N)  
File No. E80271  
APPLICATION  
Inverters, Servo drives, DC motor controllers, NC equipment, Welders  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
24.5  
7
15  
7
15  
7
2–φ5.5  
12 11  
25.5  
25.5  
BuP EuP BvP EvP BwP EwP  
P
U
V
W
P
N
BuP  
BvP  
BwP  
BuN EuN BuN EvN BwN EwN  
76  
EuP  
u
EvP  
v
EwP  
w
93  
105  
BuN  
EuN  
BvN  
EvN  
BwN  
EwN  
Tab#250, t=0.8  
N
Tab#100, t=0.5  
LABEL  
Note: All Transistor Units are Darlingtons.  
Feb.1999  

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