生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XUFM-D15 |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 15 A | 配置: | COMPLEX |
最小直流电流增益 (hFE): | 250 | 最大降落时间(tf): | 2000 ns |
JESD-30 代码: | R-XUFM-D15 | 元件数量: | 6 |
端子数量: | 15 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 83 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Power | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
晶体管元件材料: | SILICON | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
QM1600 | ETC |
获取价格 |
Compact PC Controller PC Performance for fixtures and test system control | |
QM1600S | ETC |
获取价格 |
ASIC | |
QM16XX | ETC |
获取价格 |
Compact PC Controller PC Performance for fixtures and test system control | |
QM20 | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM200DY24 | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) | |
QM200DY-24 | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
QM200DY24B | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) | |
QM200DY-24B | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
QM200DY2H | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) | |
QM200DY-2H | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE |