生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-D3 |
Reach Compliance Code: | unknown | 风险等级: | 5.81 |
Is Samacsys: | N | 其他特性: | BUILT IN BIAS RESISTOR |
最大集电极电流 (IC): | 15 A | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 50 | 最大降落时间(tf): | 2000 ns |
JESD-30 代码: | R-PUFM-D3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 100 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Power | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
晶体管元件材料: | SILICON | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MG15G1AL3 | TOSHIBA |
功能相似 |
TRANSISTOR 15 A, 450 V, NPN, Si, POWER TRANSISTOR, 2-22B1A, 3 PIN, BIP General Purpose Pow | |
KS8245A1 | POWEREX |
功能相似 |
Single Darlington Transistor Module (15 Amperes/600 Volts) | |
ETF81-050 | FUJI |
功能相似 |
POWER TRANSISTOR MODULE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
QM15KD-HB | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15TB-24 | MITSUBISHI |
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Power Bipolar Transistor, 15A I(C), 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin, MODULE | |
QM15TB-24B | MITSUBISHI |
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Power Bipolar Transistor, 15A I(C), 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin, MODULE | |
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TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) | |
QM15TB-2H | MITSUBISHI |
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MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15TB2HB | ETC |
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TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) | |
QM15TB-2HB | MITSUBISHI |
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MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15TD-9B | MITSUBISHI |
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Power Bipolar Transistor, 15A I(C), 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin, MODULE | |
QM15TD-H | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM15TD-HB | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE |